GT60N321 |
RFQ for GT60N321 |
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| Technical/Catalog Information | GT60N321(Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 170W |
| Mounting Type | Through Hole |
| Package / Case | * |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | GT60N321 Q GT60N321Q |
| Product | Manufacturers | Pack | D/C |
| GT60N321 | - | TO3PL | 04+ |
| Characteristics | symbol | Rating | Unit | |
| Collector-Emitter Voltage | VCES |
1000 | V | |
| Gate-Emitter Voltage | V GES | =25 | V | |
| Collector Current | DC | IC | 60 | A |
| 1 ms | ICP |
120 | ||
| Emitter-Collector Forward Current |
DC | IECF | 15 | A |
| 1 ms | IECFP | 120 | ||
| Collector Power Dissipation (Tc 25!aC) |
PC | 170 | W | |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature | Tstg | -5 -150 | OC | |
| Screw Torque | - | 0.B | N.m | |